Integrated DDR Power-Supply Solutions for
Desktops, Notebooks, and Graphic Cards
ELECTRICAL CHARACTERISTICS (continued)
(VIN = +15V, VDD = AVDD = VSHDNA = VSHDNB = VBST = VILIM = 5V, VOUT = VREFIN = VVTTI = 2.5V, UVP/OVP = STBY = FB = SKIP
= GND, PGND1 = PGND2 = LX = GND, TON = OPEN, VVTTS = VVTT, TA = -40°C to +85°C, unless otherwise noted. Typical values
are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
MOSFET DRIVERS
DH Gate-Driver On-Resistance
VBST - VLX = 5V
1
4
Ω
DL Gate-Driver On-Resistance in
High State
1
4
Ω
DL Gate-Driver On-Resistance in
Low State
Dead Time (Additional to
Adaptive Delay)
INPUTS AND OUTPUTS
Logic Input Threshold
(SHDN_, STBY, SKIP (Note 4))
Logic Input Current
(SHDN_, STBY, SKIP (Note 4))
Dual-Mode™ Input Logic
Levels (FB)
Input Bias Current (FB)
Four-Level Input Logic Levels
(TON, OVP/UVP (Note 4))
Logic Input Current
(TON, OVP/UVP (Note 4))
OUT Input Resistance
OUT Discharge-Mode
On-Resistance
DH falling to DL rising
DL falling to DH rising
Rising edge
Hysteresis
Low (2.5V output)
High (1.8V output)
High
Floating
REF
Low
FB = GND
FB = AVDD
FB adjustable mode
(Note 4)
0.5
3
Ω
30
ns
30
1.20
1.7
2.20
V
225
mV
-1
+1
µA
2.1
-0.1
AVDD -
0.4
3.15
1.65
0.05
V
+0.1
µA
3.85
V
2.35
0.5
-3
+3
µA
90
175
350
70
135
270
kΩ
400 800 1600
10
25
Ω
DL Turn-On Level During
Discharge Mode
(Measured at OUT)
(Note 4)
Dual Mode is a trademark of Maxim Integrated Products, Inc.
0.3
V
4 _______________________________________________________________________________________