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MC74HC390ADG
(Rev.:2014)

Dual 4-Stage Binary Ripple Counter with ÷ 2 and ÷ 5 Sections

ON Semiconductor 

MC74HC390A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol

Parameter

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)

–0.5 to +7.0

V

Vin DC Input Voltage (Referenced to GND)

–0.5 to VCC + 0.5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout DC Output Voltage (Referenced to GND)

–0.5 to VCC + 0.5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin

DC Input Current, per Pin

±20

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout DC Output Current, per Pin

±25

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC DC Supply Current, VCC and GND Pins

±50

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD Power Dissipation in Still Air,

SOIC Package†

500

mW

TSSOP Package†

450

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature

–65 to +150

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for 10 Seconds

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SOIC or TSSOP Package

260

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of

these limits are exceeded, device functionality should not be assumed, damage may occur and

reliability may be affected.

†Derating: SOIC Package: –7 mW/_C from 65_ to 125_C

TSSOP Package: −6.1 mW/_C from 65_ to 125_C

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

cuit. For proper operation, Vin and

Vout should be constrained to the

range GND v (Vin or Vout) v VCC.

Unused inputs must always be

tied to an appropriate logic voltage

level (e.g., either GND or VCC).

Unused outputs must be left open.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

VCC DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)

0

VCC

V

TA Operating Temperature, All Package Types

–55

+125

_C

tr, tf Input Rise and Fall Time

(Figure 1)

VCC = 2.0 V

0

VCC = 3.0 V

0

VCC = 4.5 V

0

VCC = 6.0 V

0

1000

ns

600

500

400

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

VIH

Parameter

Minimum High−Level Input

Voltage

VIL Maximum Low−Level Input

Voltage

VOH Minimum High−Level Output

Voltage

VOL Maximum Low−Level Output

Voltage

VCC

Test Conditions

V

Vout = 0.1 V or VCC – 0.1 V

2.0

|Iout| v 20 mA

3.0

4.5

6.0

Vout = 0.1 V or VCC – 0.1 V

2.0

|Iout| v 20 mA

3.0

4.5

6.0

Vin = VIH or VIL

2.0

|Iout| v 20 mA

4.5

6.0

Vin = VIH or VIL |Iout| v 2.4 mA 3.0

|Iout| v 4.0 mA 4.5

|Iout| v 5.2 mA 6.0

Vin = VIH or VIL

2.0

|Iout| v 20 mA

4.5

6.0

Vin = VIH or VIL |Iout| v 2.4 mA 3.0

|Iout| v 4.0 mA 4.5

|Iout| v 5.2 mA 6.0

Guaranteed Limit

–55 to

25_C

v85_C v125_C Unit

1.5

1.5

1.5

V

2.1

2.1

2.1

3.15

3.15

3.15

4.2

4.2

4.2

0.5

0.5

0.5

V

0.9

0.9

0.9

1.35

1.35

1.35

1.8

1.8

1.8

1.9

1.9

1.9

V

4.4

4.4

4.4

5.9

5.9

5.9

2.48

2.34

2.20

3.98

3.84

3.70

5.48

5.34

5.20

0.1

0.1

0.1

V

0.1

0.1

0.1

0.1

0.1

0.1

0.26

0.33

0.40

0.26

0.33

0.40

0.26

0.33

0.40

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