NCP1606 Ver la hoja de datos (PDF) - ON Semiconductor
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NCP1606 Datasheet PDF : 22 Pages
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NCP1606
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: For typical values, TJ = 25°C. For min/max values, TJ = −25°C to +125°C, VCC = 12 V, FB = 2.4 V, CDRV =
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
Symbol
Rating
Min
Typ
Max Unit
VSDL
Shutdown Threshold (VZCD falling)
VSDH
Enable Threshold (VZCD rising)
VSDHYS Shutdown Comparator Hysteresis
tZCD
Zero current detection propagation delay
tSYNC
Minimum detectable ZCD pulse width
tSTART
Drive off restart timer
RAMP CONTROL
ICHARGE Charge Current (VCT = 0 V)
tCT(discharge) Time to discharge a 1 nF Ct capacitor from VCT = 3.4 V to 100 mV.
VCTMAX Maximum Ct level before DRV switches off
tPWM
Propagation delay of the PWM comparator
OVER AND UNDERVOLTAGE PROTECTION
IOVP
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ TJ = 25°C
NCP1606B @ TJ = −25°C to +125°C
IOVP(HYS)
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B
150
200
−
290
−
90
−
100
−
70
75
180
250
mV
350
mV
−
mV
170
ns
−
ns
300
ms
243
270
−
−
2.9
3.2
−
150
297
mA
100
ns
3.3
V
220
ns
mA
34
40
45
9.0
10.4
11.8
8.7
−
12.1
−
30
−
8
mA
−
−
VOVP
Static OVP Threshold Voltage
VEAL +
V
100 mV
VUVP
Undervoltage protection (UVP) threshold voltage
0.25
0.3
GATE DRIVE SECTION
ROH
ROL
Gate Drive Resistance:
ROH @ ISOURCE = 100 mA
ROH @ ISOURCE = 20 mA
ROL @ ISINK = 100 mA
ROL @ ISINK = 20 mA
−
12
−
12
−
6
−
6
trise
Drive voltage rise time from 10% VCC to 90% VCC with CDRV = 1 nF and VCC = 12 V.
−
30
tfall
Drive voltage fall time from 10% VCC to 90% VCC with CDRV = 1 nF and VCC = 12 V.
−
25
VOUT(start) Driver output voltage at VCC = VCC(on) − 200 mV and Isink = 10 mA
−
−
3. Parameter characterized and guaranteed by design, but not tested in production.
0.4
V
W
18
18
10
10
80
ns
70
ns
0.2
V
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