NCP1607 Ver la hoja de datos (PDF) - ON Semiconductor
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NCP1607 Datasheet PDF : 23 Pages
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NCP1607
ELECTRICAL CHARACTERISTICS
(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to +125°C, unless otherwise specified,
VCC = 12 V, VFB = 2.4 V, VCS = 0 V, VCONTROL = open, VZCD = open, CDRV = 1 nF, CT = 1 nF)
Characteristics
Symbol
Min
Typ
Max Unit
Current Capability of the Negative Active Clamp:
in normal mode (VZCD = 300 mV)
in shutdown mode (VZCD = 100 mV)
ICL(NEG)
2.5
3.7
35
70
5.0
mA
100
mA
Shutdown Threshold (VZCD falling)
VSDL
150
205
250
mV
Enable Threshold (VZCD rising)
VSDH
−
290
350
mV
Shutdown Comparator Hysteresis
VSD(HYS)
−
85
−
mV
Zero Current Detection Propagation Delay
tZCD
−
100
170
ns
Minimum Detectable ZCD Pulse Width
tSYNC
−
70
−
ns
Drive off Restart Timer
tSTART
75
179
300
ms
RAMP CONTROL
Ct Charge Current (VCT = 0 V)
−25°C < TJ < +125°C
−40°C < TJ < +125°C
ICHARGE
243
270
235
270
297
mA
297
Time to discharge a 1 nF Ct capacitor from VCT = 3.4 V to 100 mV.
tCT(discharge)
−
−
100
ns
Maximum Ct level before DRV switches off
−25°C < TJ < +125°C
−40°C < TJ < +125°C
VCTMAX
2.9
3.2
2.9
3.2
3.3
V
3.4
PWM Propagation Delay
tPWM
−
142
220
ns
OVER AND UNDERVOLTAGE PROTECTION
Dynamic Overvoltage Protection (OVP) Triggering Current:
TJ = 25°C
TJ = −40°C to +125°C
IOVP
mA
9.0
10.5
11.8
8.7
−
12.1
Hysteresis of the dynamic OVP current before the OVP latch is released
IOVP(HYS)
−
8.5
−
mA
Static OVP Threshold Voltage
VOVP
−
VEAL +
−
V
100 mV
Undervoltage Protection (UVP) Threshold Voltage
VUVP
0.25 0.302
0.4
V
GATE DRIVE SECTION
Gate Drive Resistance:
ROH @ ISOURCE = 100 mA
ROL @ ISINK = 100 mA
ROH
ROL
W
−
12
18
−
6.0
10
Drive voltage rise time from 10% VCC to 90% VCC
trise
−
30
80
ns
Drive voltage fall time from 90% VCC to 10% VCC
tfall
−
25
70
ns
Driver output voltage at VCC = VCC(on) − 200 mV and Isink = 10 mA
VOUT(start)
−
−
0.2
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
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