P4C148 Ver la hoja de datos (PDF) - Semiconductor Corporation
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P4C148 Datasheet PDF : 10 Pages
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P4C148/P4C149
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
Pa ra m e te r
-10
-12
-15
-20
-25
-35
-45
-55
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time
10
12
15
20
25
35
45
55
tCW Chip Enable Time to End of Write
8
10
12
16
20
25
30
35
tAW Address Valid to End of Write
8
10
12
16
20
25
30
35
tAS Address Set-up Time
0
0
0
0
0
0
0
0
tWP Write Pulse Width
8
10
12
16
20
25
30
35
tAH Address Hold Time from End of Write
0
0
0
0
0
0
0
0
tDW Data Valid to End of Write
tDH Data Hold Time
5
6
7
9
12
16
20
25
0
0
0
0
0
0
0
0
tWZ Write Enable to Output in High Z
5
6
7
7
8
12
15
20
tOW Output Active from End of Write
0
0
0
0
0
0
0
0
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(9)
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE/CS CONTROLLED)(9)
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE high, the output remains in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first transition address.
Document # SRAM104 REV B
Page 4 of 10
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