P4C168 Ver la hoja de datos (PDF) - Semiconductor Corporation
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P4C168 Datasheet PDF : 15 Pages
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P4C168, P4C169, P4C170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
Parameter
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max
Unit
tWC
Write Cycle Time
12
15
18
20
30
ns
tcw
Chip Enable Time to End of Write
12
15
18
20
30
ns
tAW
Address Valid to End of Write
12
15
18
20
30
ns
tAS
Address Set-up Time
0
0
0
0
0
ns
tWP
Write Pulse Width
12
15
18
20
30
ns
tAH
Address Hold Time
0
0
0
0
0
ns
tDW
Data Valid to End of Write
7
8
10
10
15
ns
tDH
Data Hold Time
0
0
0
0
0
ns
tWZ
Write Enable to Output in High Z
4
5
6
7
13
ns
tOW
Output Active from End of Write
0
0
0
0
0
ns
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE (CONTINUED)
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
Parameter
-45
-55
-70
Min Max Min Max Min Max
Unit
tWC
Write Cycle Time
45
55
70
ns
tcw
Chip Enable Time to End of Write
40
50
60
ns
tAW
Address Valid to End of Write
40
50
60
ns
tAS
Address Set-up Time
0
0
0
ns
tWP
Write Pulse Width
40
50
60
ns
tAH
Address Hold Time
0
0
0
ns
tDW
Data Valid to End of Write
20
20
25
ns
tDH
Data Hold Time
3
3
3
ns
tWZ
Write Enable to Output in High Z
20
25
30
ns
tOW
Output Active from End of Write
0
0
0
ns
Document # SRAM107 REV A
Page 5 of 15
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