P4C188 Ver la hoja de datos (PDF) - Semiconductor Corporation
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P4C188 Datasheet PDF : 12 Pages
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P4C188/188L
AC CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
Parameter
-10
Min Max
tWC Write Cycle Time 10
tCW Chip Enable
7
Time to
End of Write
tAW Address Valid
7
to End of Write
tAS Address
0
Set-up Time
-12
Min Max
12
8
8
0
-15
Min Max
13
10
10
0
-20
Min Max
20
13
15
0
-25
Min Max
25
15
20
0
-35
Min Max
35
25
25
0
-45
Min Max
Unit
45
ns
35
ns
35
ns
0
ns
tWP Write Pulse
8
9
10
13
15
25
35
ns
Width
tAH Address Hold
0
0
0
0
0
0
0
ns
Time from
End of Write
tDW Data Valid to
5
6
End of Write
tDH
Data Hold
Time
0
0
7
8
10
15
20
ns
0
0
0
0
5
ns
tWZ
Write Enable
to Output in
High Z
5
6
6
8
10
15
20 ns
tDW Output Active
2
2
from End
of Write
2
2
2
3
3
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED) (9)
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
Document # SRAM112 REV A
12. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is
sampled and not 100% tested.
Page 5 of 12
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