PHW20N50E Ver la hoja de datos (PDF) - Philips Electronics
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PHW20N50E Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHW20N50E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 20 A
RDS(ON) ≤ 0.27 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHW20N50E is supplied in the
SOT429 (TO247) conventional
leaded package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
20
12.4
80
250
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
Unclamped inductive load, IAS = 20 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy1
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
IAR = 20 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
1300
32
20
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.000
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