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PHW20N50E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

MECHANICAL DATA

Dimensions in mm

Net Mass: 5 g

3.5

21

max

16 max

5.3 max

1.8

5.3

7.3

o 3.5

max

15.5

max

seating

plane

Product specification

PHW20N50E

4.0

15.5

max

min

12

3

2.2 max

3.2 max

1.1

5.45 5.45

2.5

0.4 M

0.9 max

Fig.19. SOT429; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT429 envelope.

3. Epoxy meets UL94 V0 at 1/8".

December 1998

6

Rev 1.000

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