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R5007ANX

10V Drive Nch MOSFET

ROHM Semiconductor 

R5007ANX

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±100 nA VGS=±30V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 500

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

−

−

100 μA VDS=500V, VGS=0V

Gate threshold voltage

VGS(th)

2.5

−

4.5

V VDS=10V, ID=1mA

Static drain-source on-state resistance

RDS(on) ∗

−

0.8 1.05 Ω ID=3.5A, VGS=10V

Forward transfer admittance

| Yfs | ∗ 2.5

−

−

S ID=3.5A, VDS=10V

Input capacitance

Ciss

−

500

−

pF VDS=25V

Output capacitance

Coss

−

300

−

pF VGS=0V

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Crss

−

td(on) ∗

−

tr ∗ −

td(off) ∗

−

tf ∗ −

Qg ∗ −

Qgs ∗

−

Qgd ∗

−

23

−

20

−

22

−

50

−

25

−

13

−

3.5

−

5.5

−

pF f=1MHz

ns ID=3.5A, VDD 250V

ns VGS=10V

ns RL=71.4Ω

ns RG=10Ω

nC VDD 250V

ID=7A

nC VGS=10V

nC RL=35.7Ω / RG=10Ω

∗ Pulsed

Body diode characteristics (Source-drain) (Ta=25C)

Parameter

Forward voltage

Symbol Min. Typ. Max. Unit

VSD ∗

−

− 1.5 V

∗ Pulsed

Conditions

IS= 7A, VGS=0V

Data Sheet

www.rohm.com

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.01 - Rev.B

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