R5007ANX Ver la hoja de datos (PDF) - ROHM Semiconductor
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R5007ANX Datasheet PDF : 6 Pages
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R5007ANX
Electrical characteristic curves
100
Operation in this
area is limited
10 by RDS(ON)
PW=100us
PW=1ms
1
DC operation
0.1
Ta = 25°C
Single Pulse
0.01
0.1
1
10
100 1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
10
8
8.0V 10V
7.0V
Ta= 25°C
Pulsed
6.5V
6
6.0V
5.5V
4
5.0V
2
VGS= 4.5V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2: Typical Output Characteristics(Ⅰ)
Data Sheet
5
Ta= 25°C
4 Pulsed
10
8.0
7.0
3
6.5
5.5
2
6.0
5.0
1
VGS= 4.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical Output Characteristics(Ⅱ)
100
VDS= 10V
Pulsed
10
Ta= 125°C
1 Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
6
VDS= 10V
5 ID= 1mA
4
3
2
1
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel
10
VGS= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
3
Ta=25°C
2.5
Pulsed
2
1.5
ID= 7.0A
1
ID= 3.5A
0.5
0
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
3
VGS= 10V
2.5 Pulsed
2
1.5
ID= 7A
1
ID= 3.5A
0.5
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
100
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
0.1
Ta= 75°C
Ta= 125°C
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.B
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