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RJP60F0DPE

600 V - 25 A - IGBT High Speed Power Switching

Renesas Electronics 

RJP60F0DPE

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

4

Collector to emitter saturation voltage VCE(sat)

—

—

Input capacitance

Cies



Output capacitance

Coes



Reverse transfer capacitance

Cres



Switching time

td(on)



tr



td(off)



tf



Notes: 2. Pulse test

Typ

—

—

—

1.4

1.7

1550

82

26

46

92

70

90

Preliminary

Max

100

±1

8

1.82

—















Unit

A

A

V

V

V

pF

pF

pF

ns

ns

ns

ns

(Tj = 25°C)

Test Conditions

VCE = 600V, VGE = 0

VGE = ±30 V, VCE = 0

VCE = 10V, IC = 1 mA

IC = 25 A, VGE = 15V Note2

IC = 50 A, VGE = 15V Note2

VCE = 25 V

VGE = 0 V

f = 1 MHz

IC = 30 A, VCE = 400 V

VGE = 15 V, Rg = 5 Note2

Inductive load

Diode clamp: RJH60F0DPK

R07DS0540EJ0100 Rev.1.00

Sep 09, 2011

Page 2 of 6

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