RJP60F0DPE Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
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RJP60F0DPE Datasheet PDF : 7 Pages
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RJP60F0DPE
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
10
= 10 μs
1
0.1
0.01
Tc = 25°C
1 shot pulse
0.001
0.1
1
10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
PVuClEse=T1e0stV
TPau=lse25T°eCst
10
Tc = 75°C
1
25°C
0.1
–25°C
0.01
4
6
8
10
12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
2.0
IC = 50 A
1.8
1.6
25 A
1.4
15 A
1.2 VGE = 15 V
Pulse Test
1.0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0540EJ0100 Rev.1.00
Sep 09, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
13 V
15 V
60
11 V
10 V
9.8 V
9.6 V
9.4 V
9.2 V
40
9V
8.8 V
20
8.6 V
VGE = 8.4 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
2.6
Ta = 25°C
Pulse Test
2.2
1.8
IC = 50 A
25 A
1.4
15 A
1.0
6
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
Page 3 of 6
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