RJP60V0DPM Ver la hoja de datos (PDF) - Renesas Electronics
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RJP60V0DPM Datasheet PDF : 8 Pages
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RJP60V0DPM
600V - 22A - IGBT
Application: Inverter
Features
High breakdown-voltage
Low Collector to Emitter saturation Voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
Short circuit withstand time (6 s typ.)
Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Preliminary Datasheet
R07DS0669EJ0100
Rev.1.00
Feb 07, 2012
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
±30
45
22
90
40
3.125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0669EJ0100 Rev.1.00
Feb 07, 2012
Page 1 of 7
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