RJP60V0DPM
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
5.5
Collector to emitter saturation voltage VCE(sat)
—
VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Short circuit withstand time
tsc
—
Notes: 3. Pulse test.
Preliminary
Typ
—
—
—
1.5
1.9
1080
58
42
75
10
45
45
40
100
70
6
Max
1
±1
7.5
2.1
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
(Ta = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 22 A, VGE = 15 V Note3
IC = 45 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 22 A
VCE = 300 V , VGE = 15 V
IC = 22 A
Rg = 5
Inductive load
VCC 360 V , VGE = 15 V
Tc = 100 C
R07DS0669EJ0100 Rev.1.00
Feb 07, 2012
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