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RJP1CS08DWA

1250V - 200A - IGBT Application: Inverter

Renesas Electronics 

RJP1CS08DWT/RJP1CS08DWA

Preliminary

Electrical Characteristics (These data are an actual measurement value in a package.)

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

5.0

Collector to emitter saturation voltage VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Short circuit withstand time

tsc

10

Typ

—

—

—

1.80

19.5

0.56

0.46

130

120

730

120

—

Notes: 1. Pulse test.

2. Switching time test circuit and waveform are shown below.

Max

1

±1

6.8

2.25

—

—

—

—

—

—

—

—

Unit

A

A

V

V

nF

nF

nF

ns

ns

ns

ns

s

(Ta = 25°C)

Test Conditions

VCE = 1250 V, VGE = 0

VGE = ±30 V, VCE = 0

VCE = 10 V, IC = 6.7 mA

IC = 200 A, VGE = 15 V Note1

VCE = 25 V

VGE = 0

f = 1 MHz

VCC = 600 V Note2

IC = 200 A

VGE = ±15 V

Rg = 10 , Tj = 125 C

Inductive load

VCC  720 V , VGE = 15 V

Tj = 150 C

Switching Time Test Circuit

Waveform

Diode clamp

Rg

L

D.U.T

VGE

90%

VCC

IC

90%

10%

90%

10%

td(off)

tf

10%

td(on) tr

R07DS0831EJ0100 Rev.1.00

Jan 23, 2013

Page 2 of 3

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