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RJP1CS08DWT/RJP1CS08DWA
Die Dimension
1.31
8.88
Preliminary
Gate
bonding pad
Emitter bonding pad (1)
Emitter bonding pad (2)
Emitter bonding pad (3)
Emitter bonding pad (4)
10.25
11.9
Unit: mm
Note 1.
Illustration
Part of white
Part of dotted line
Part of gray
Definition
Al pattern
Bonding area
Final passivation
Note 2. The back of the chip is processed with Au evaporation.
Note 3. Recognition, target and any other patterns which are not related to
IGBT operation, may be changed without notice.
Ordering Information
Orderable Part Number
RJP1CS08DWA-80#W0
RJP1CS08DWT-80#X0
R07DS0831EJ0100 Rev.1.00
Jan 23, 2013
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