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HIP6020

Advanced Dual PWM and Dual Linear Power Controller

Intersil 

HIP6020

cases, one or two percent as a result. The diode's rated

reverse breakdown voltage must be greater than the

maximum input voltage.

PWM2 MOSFET and Schottky Selection

The power dissipation in PWM2 converter is similar to

PWM1 except that the power losses of the lower device is in

a Schottky and not a MOSFET. The power losses of PWM2

converter are distributed between the upper MOSFET and

the Schottky. The equations below describe an

approximation of this distribution and assume a linear

voltage-current switching transitions.

PMOS = I--O-----2----×-----r--D----S----V(--O--I--N-N----)---×-----V----O-----U----T-- + I--O------×-----V----I--N-----×-2----t--S----W------×-----F----S--

PSCH = I--O------×-----V----f---×-----(-V-V---I--IN-N------–----V----O-----U----T----)

Linear Controllers Transistor Selection

The HIP6020 linear controllers are compatible with both

NPN bipolar as well as N-Channel MOSFET transistors. The

main criteria for selection of pass transistors for the linear

regulators is package selection for efficient removal of heat.

The power dissipated in a linear regulator is

PLINEAR = IO × (VIN – VOUT)

Select a package and heatsink that maintains the junction

temperature below the maximum desired temperature with

the maximum expected ambient temperature.

When selecting bipolar NPN transistors for use with the

linear controllers, insure the current gain at the given

operating VCE is sufficiently large to provide the desired

output load current when the base is fed with the minimum

driver output current.

2-294

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