SSM9960M Ver la hoja de datos (PDF) - Silicon Standard Corp.
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SSM9960M Datasheet PDF : 6 Pages
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SSM9960M/GM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆BV ∆ DSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=7A
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω ,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
40 -
-
V
- 0.032 - V/°C
-
- 20 mΩ
-
- 32 mΩ
1
-
3
V
- 25 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 14.7 - nC
- 7.1 - nC
- 6.8 - nC
- 11.5 - ns
- 6.3 - ns
- 28.2 - ns
- 12.6 - ns
- 1725 - pF
- 235 - pF
- 145 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C,IS=2.3A, VGS=0V
Min. Typ. Max. Units
-
- 1.54 A
-
- 1.3 V
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
8/21/2004 Rev.2.01
www.SiliconStandard.com
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