SSM9960M Ver la hoja de datos (PDF) - Silicon Standard Corp.

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Lista de partido

SSM9960M

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Silicon Standard Corp. 

SSM9960M/GM

12

I D =7.0A

10000

9

VDS =12V

1000

VDS =16V

VDS =20V

6

100

3

f=1.0MHz

Ciss

Coss

Crss

0

0

5

10

15

20

25

Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics

10

1

7

13

19

25

31

V DS (V)

Fig 10. Typical Capacitance Characteristics

100

10

Tj=150 o C

1

Tj=25 o C

0.1

0.01

0

0.4

0.8

1.2

V SD (V)

Fig 11. Forward Characteristic of

Reverse Diode

3.5

3

2.5

2

1.5

1

0.5

-50

0

50

100

150

T j , Junction Temperature ( o C )

Fig 12. Gate Threshold Voltage vs.

Junction Temperature

8/21/2004 Rev.2.01

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