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STI15NM65N

N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STMicroelectronics 

STF15NM65N-STI15NM65N-STW15NM65N

STB15NM65N-STP15NM65N

N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247

Second generation MDmesh™ Power MOSFET

Features

Type

VDSS

(@Tjmax)

RDS(on) Max

ID

STB15NM65N

STF15NM65N

STI15NM65N

STP15NM65N

STW15NM65N

710 V

710 V

710 V

710 V

710 V

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

15.5 A

15.5 A(1)

15.5 A

15.5 A

15.5 A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements the second

generation of MDmesh™ Technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D²PAK

123

I²PAK

3

2

1

TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

STI15NM65N

STF15NM65N

STP15NM65N

STB15NM65NT4

STW15NM65N

Marking

15NM65N

15NM65N

15NM65N

15NM65N

15NM65N

Package

I²PAK

TO-220FP

TO-220

D²PAK

TO-247

Packaging

Tube

Tube

Tube

Tape & reel

Tube

September 2007

Rev 1

1/18

www.st.com

18

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