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STI15NM65N

N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STMicroelectronics 

STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220/I²PAK

D²PAK/TO-247

TO-220FP

Unit

VDS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25°C

ID

Drain current (continuous) at TC = 100°C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

dv/dt (3) Peak diode recovery voltage slope

VISO

Tj

Tstg

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

Operating junction temperature

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤15.5A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS

650

± 25

15.5

10

15.5(1)

10(1)

62

62(1)

150

35

15

V

V

A

A

A

W

V/ns

--

2500

V

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case Max

Rthj-amb Thermal resistance junction-amb Max

Tl

Maximum lead temperature for soldering

purpose

Value

TO-220/I²PAK

D²PAK/TO-247

TO-220FP

Unit

0.83

3.6

62.5

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, ID= IAS, VDD= 50 V)

Max value

Unit

4

A

400

mJ

3/18

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