W14NK60Z(2005) Ver la hoja de datos (PDF) - STMicroelectronics

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W14NK60Z
(Rev.:2005)

N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z

Table 3: Absolute Maximum ratings

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT Total Dissipation at TC = 25°C

Derating Factor

VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ)

dv/dt (1) Peak Diode Recovery voltage slope

VISO Insulation Winthstand Voltage (DC)

Tj

Operating Junction Temperature

Tstg Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 13.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Value

TO-220/D²PAK/I²PAK

TO-247

600

600

± 30

13.5

8.5

54

160

1.28

4000

4.5

--

TO-220FP

13.5 (*)

8.5 (*)

54 (*)

40

0.32

2500

-55 to 150

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Tl

Maximum Lead Temperature For Soldering Purpose

TO-220/D²PAK/I²PAK

TO-247

0.78

62.5

300

TO-220FP

3.1

50

Table 5: Avalanche Characteristics

Symbol

Parameter

IAR Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Table 6: Gate-Source Zener Diode

Symbol

Parameter

Test Conditions

BVGSO Gate source Breakdown Igs= ± 1 mA (Open Drain)

Voltage

Max Value

12

300

Min.

30

Typ.

Max.

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

Unit

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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