W14NK60Z(2005) Ver la hoja de datos (PDF) - STMicroelectronics
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W14NK60Z
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
W14NK60Z Datasheet PDF : 17 Pages
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
600
V
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on) Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
0.45
0.5
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss eq. (3) Equivalent Output Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID= 6 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 480V
VDD = 300 V, ID = 6 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure 21)
VDD = 480V, ID = 12 A,
VGS = 10V
(see, Figure 24)
Min.
Typ.
11
2220
240
57
122
26
18
62
13
75
13.2
38.6
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
12
A
48
A
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 22)
490
ns
4.7
µC
19.3
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 22)
664
ns
6.8
µC
20.5
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
3/17
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