STPS30170CFP Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Lista de partido
STPS30170CFP Datasheet PDF : 9 Pages
| |||
STPS30170C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode) (TO-220AB, TO-247,
D2PAK)
Zth(j-c)/Rth(j-c)
1.0
TO-220AB, TO -247 & D²PAK
0.9
0.8
0.7
d=0.5
0.6
0.5
0.4 d=0.2
0.3 d=0.1
T
0.2
0.1 Single pulse
0.0
1.E-03
1.E-02
tP(s)
d=tp/T
1.E-01
tp
1.E+00
Figure 8: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode) (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
TO-220FPAB
0.9
0.8
0.7
0.6
d=0.5
0.5
0.4
d=0.2
0.3
0.2
D=0.1
0.1
Single pulse
0.0
1.E-03
1.E-02
tP(s)
1.E-01
T
d=tp/T
1.E+00
tp
1.E+01
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(µA)
1.E+06
1.E+05
1.E+04
1.E+03
Tj=175°C
Tj=150°C
Tj=125°C
1.E+02
Tj=75°C
1.E+01
1.E+00
Tj=25°C
1.E-01
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 11: Forward voltage drop versus
forward current (maximum values, per diode,
low level)
IFM(A)
15.0
12.5
10.0
Tj=125°C
(Maximum values)
7.5
Tj=125°C
(Typical values)
5.0
2.5
VFM(V)
Tj=25°C
(Maximum values)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 10: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
Figure 12: Forward voltage drop versus
forward current (maximum values, per diode,
high level)
IFM(A)
100
Tj=125°C
(Maximum values)
Tj=125°C
10
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
4/9
Share Link: 