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CB45000

HCMOS6 STANDARD CELLS

STMicroelectronics 

CB45000 SERIES

GENERAL DESCRIPTION

The CB45000 standard cell series uses a high

performance, low voltage, 5 level metal,

HCMOS6 0.35 micron process to achieve sub-

nanosecond internal speeds while offering very

low power dissipation and high noise immunity.

With an average routed logic density of 14000

gates/mm2, the CB45000 family allows the

design of highly complex devices. The potential

available gate count ranges above 3 Million

equivalent gates. Devices can operate over a Vdd

voltage range of 2.7 to 3.6 volts.

The I/O count for this array family ranges to over

750 signals and 1000 pins based upon the

package technology utilized. A flexible I/O

approach has been developed to provide an

optimum solution for today’s complex system

problems of drive levels and specialized interface

standards.

The product offers a variable bonding approach

supporting pad spacings from 80µ upwards and

supports staggered pad rows to address today’s

bonding technologies. Additional flexibility to

support 65µ and 50µ pad spacing will be

available in the near future.

The I/O can be configured for circuits ranging

from low voltage CMOS and TTL to low swing

differential circuits (LVDS) and the 1Gigabit per

second high speed link. Standards like SCSI, 3.3

and 5 Volt PCI and other 5.0 Volt interfaces are

currently being addressed.

Figure 1

Process Overview

Metal 5 : Al-Cu

Metal 4 : Al-Cu

Metal 3 : Al-Cu

Metal 2 : Al-Cu

Metal 1 : W

2/16

®

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