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TGA1342-SCC

2-20 GHz Wideband AGC Amplifier

TriQuint Semiconductor 

Product Data Sheet

2-20 GHz Wideband AGC Amplifier

TGA1342-SCC

July 1, 2001

Key Features and Performance

• 0.5 um MESFET Technology

• 9 dB Nominal Gain

• 3.5 dB NF Typical Midband

• 17.5 dBm Nominal Pout @ P1dB

• Bias 5-8V @ 60 mA

• Dimensions 3.4 x 2.0 x 0.1 mm

Chip Dimensions: 3.4 x 2.0 x 0.1 mm

Primary Applications

• Wideband Gain Block / LN Amplifier

• X-Ku Point to Point Radio

• IF & LO Buffer Applications

Description

The TriQuint TGA1342-SCC is a monolithic dual

gate low noise distributed amplifier with AGC via the

control gate. This LNA operates from 2 to 20 GHz.

Nine 120um gatewidth FETs typically provide 3.5 dB

of noise figure, 17.5 dBm of output power at 1 dB

gain compression, and 9 dB small signal gain.

Typical input return loss and output return loss are

20 dB. Ground is provided to the circuitry through

vias to the backside metallization. The TGA1342-

SCC low noise distributed amplifier is suitable for a

commercial radio and variety of wideband electronic

warfare systems such as radar warning receivers,

electronic counter measures, decoys, jammers and

phased array systems.

Bond pad and backside metallization is gold plated

for compatibility with eutectic alloy attachment

methods as well as the thermocompression and

thermosonic wire bonding processes. The

TGA1342-SCC is supplied in chip form and is

assembled using automated equipment.

Typical Electrical Characteristics

Vd = 6V, Id =60mA Temp = 25C

12.0

10.0

8.0

6.0

4.0

2 4 6 8 10 12 14 16 18 20

Frequency (GHz)

6.0

5.0

4.0

3.0

2.0

1.0

2 4 6 8 10 12 14 16 18

Frequency (GHz)

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

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