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TGA1342-SCC

2-20 GHz Wideband AGC Amplifier

TriQuint Semiconductor 

Product Data Sheet

TGA1342-SCC

TABLE III

RF CHARACTERISTICS

(TA = 25°C + 5°C)

NOTE

TEST

MEASUREMENT

CONDITIONS

Vd=6V, Id=60mA

1/ Small Signal

Gain Magnitude

F = 6 – 14 GHz

F = 16 – 18 GHz

F = 2 – 20 GHz

Power Output

F = 2 - 20 GHz

@ 1 dB Gain Compression

2/ Noise Figure

1/ Input Return Loss

Magnitude

F = 6 – 15 GHz

F= 18 GHz

F = 6 – 18 GHz

1/ Output Return Loss

Magnitude

F = 6 – 18 GHz

VALUE

UNITS

MIN TYP MAX

9

8

9

17.5

dB

dB

dB

dBm

4.5

dB

5.5

dB

-12

dB

-10.5 dB

1/

RF probe data is taken at 2 GHz steps from 6-18GHz

2/

RF probe data is taken at 3 GHz steps from 6-18 GHz

TABLE IV

THERMAL INFORMATION*

PARAMETER

RθJC Thermal Resistance

(channel to backside of

carrier)

TEST

CONDITIONS

Vd = 6 V

ID = 60 mA

Pdiss = 0.36 W

TCH

(OC)

81.30

RθJC

(°C/W)

TM

(HRS)

31.388 3.7E+11

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

* This information is a result of a thermal model.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

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