TGA4508 Ver la hoja de datos (PDF) - TriQuint Semiconductor

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TGA4508

Ka Band Low Noise Amplifier

TriQuint Semiconductor 

TGA4508

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

V+

Positive Supply Voltage

Vg1 Gate 1 Supply Voltage Range

I+

Positive Supply Current

| IG | Gate Supply Current

PIN Input Continuous Wave Power

PD Power Dissipation

TCH Operating Channel Temperature

Mounting Temperature (30 Seconds)

TSTG Storage Temperature

VALUE

5V

-1 V TO 0 V

190 mA

6 mA

12 dBm

0.95 W

200 °C

320 °C

-65 to 150 °C

NOTES

2/

2/

2/

2/, 3/

4/, 5/

1/ These ratings represent the maximum operable values for this device.

2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply

current, input power, and output power shall not exceed PD.

3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life

is 3.0E3 hours.

4/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest

possible levels.

5/ These ratings apply to each individual FET.

TABLE II

DC PROBE TESTS

(Ta = 25 °C, Nominal)

SYMBOL

PARAMETER

VBVGS3

Breakdown Voltage gate-

source

VBVGD3

Breakdown Voltage gate-

drain

VP1,2,3

Pinch-off Voltage

MINIMUM MAXIMUM UNITS

-30

-5

V

-30

-5

V

-1.0

-0.1

V

Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET

2

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