TGA4517(2006) Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGA4517 Datasheet PDF : 10 Pages
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Advance Product Information
February 10, 2006
TGA4517
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current (Quiescent), Idq
Gate Voltage, Vg
Small Signal Gain, S21 @ Mid-band
Input Return Loss, S11
Output Return Loss, S22
Output Power, Psat
TYPICAL
31 - 37
6
2
-0.5
20
14
12
35
UNITS
GHz
V
A
V
dB
dB
dB
dBm
TABLE IV
THERMAL INFORMATION
PARAMETER
RθJC Thermal Resistance
(channel to backside of carrier)
TEST
CONDITIONS
Vd = 6 V
Idq = 2 A
Pdiss = 12 W
TCH
(OC)
122.3
RTJC
(qC/W)
4.36
TM
(HRS)
1.2E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
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