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TGA4542

37 - 40 GHz 1W Power Amplifier

TriQuint Semiconductor 

TGA4542

37 - 40 GHz 1W Power Amplifier

Specifications

Absolute Maximum Ratings

Parameter

Drain to Gate Voltage, Vd - Vg

Drain Voltage, Vd

Gate Voltage, Vg

Drain Current, Id

Gate Current, Ig

Power Dissipation, Pdiss

RF Input Power, CW, 50Ω,

T=25°C

Channel Temperature, Tch

Mounting Temperature

(30 Seconds)

Storage Temperature

Rating

10V

+6.5 V

-4 to 0 V

2086 mA

-8.2 to 113 mA

13.6 W

26 dBm

200°C

320°C

-40 to 150C

Operation of this device outside the parameter ranges

given above may cause permanent damage.

Recommended Operating Conditions

Parameter

Min

Operating Temp. Range -40

Vd

Id

Id (Under RF Drive)

Vg

Typ

+25

6.0

900

1500

-0.7

Max

+85

Units

C

V

mA

mA

V

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all

recommended operating conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25 ºC, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical.

Parameter

Conditions

Min

Typ

Operational Frequency Range

37

Gain

26

Input Return Loss

8

Output Return Loss

15

Output Power

Saturation

32.5

Output Power

1dB Gain Compression

31.5

Output TOI

18 dBm Output/Tone

38

Gain Temperature Coefficient

-0.04

Power Temperature Coefficient 1dB Gain Compression

-0.013

Max

40

Units

GHz

dB

dB

dB

dBm

dBm

dBm

dB/°C

dB/°C

Preliminary Data Sheet: Rev - 9/15/12

© 2012 TriQuint Semiconductor, Inc.

- 2 of 12 -

Disclaimer: Subject to change without notice

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