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TGA4542

37 - 40 GHz 1W Power Amplifier

TriQuint Semiconductor 

TGA4542

37 - 40 GHz 1W Power Amplifier

Specifications

Thermal and Reliability Information

Parameter

Thermal Resistance, θJC, measured to back of

thermal spreader

Small-Signal

Under RF Drive

Channel Temperature (Tch), and Median Lifetime

(Tm)

Condition

Tbase = 70 °C

Tbase = 70 °C, Vd = 6 V, Id = 900

mA, Pdiss = 5.4 W

Channel Temperature (Tch), and Median Lifetime

(Tm) Under RF Drive

Tbase = 70 °C, Vd = 6 V, Id = 1500

mA, Pout = 32.5 dBm, Pdiss = 7.2 W

Rating

θJC = 7.6 °C/W

θJC = 10.4 °C/W

Tch = 111 °C

Tm = 2.2E+7

Hours

Tch = 145 °C

Tm = 1.8E+6

Hours

Note: Thermal model includes 38um AuSn bondline and 500um CuMo thermal spreader

1.E+15

Median Lifetime (Tm) vs. Channel Temperature (Tch)

1.E+14

1.E+13

1.E+12

1.E+11

1.E+10

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

1.E+04 FET5

25

50

75

100

125

150

175

200

Channel Temperature, Tch (°C)

Preliminary Data Sheet: Rev - 9/15/12

© 2012 TriQuint Semiconductor, Inc.

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Disclaimer: Subject to change without notice

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