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TZA3047B

30 Mbits/s up to 1.25 Gbits/s laser drivers

Philips Electronics 

Philips Semiconductors

30 Mbits/s up to 1.25 Gbits/s laser drivers

Product specification

TZA3047A; TZA3047B

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

ERmax

high extinction ratio setting dual-loop set-up; IER < −10 µA;

note 3

linear scale

13

15

ERacc

Vref(ER)

IER

relative accuracy of ER

reference voltage on

pin ER

current sink on pin ER

dB scale

temperature and VCCA

variations; ER = 10;

AVR = 550 µA

IER = −35 to −5 µA;

CER < 100 pF

11

11.8

−10 −

1.15 1.20

−35 −

Average setting for dual-loop control and average loop control: pins MON and AVR

Iav(MON)(low)

Iav(MON)(max)

low average monitor

current setting

maximum average monitor

current setting

IAVR > −280 µA

dual-loop (ER = 5)

average loop (pin ER to GND)

IAVR = −15.0 µA

dual-loop (ER = 5)

−

−

1 200

−

−

1 300

average loop (pin ER to GND) 1200 1300

∆Iav(MON)

Vref(AVR)

Isink(AVR)

relative accuracy of

average current on

pin MON

reference voltage on

pin AVR

current sink on pin AVR

temperature and VCCA

variations; ER = 10;

AVR = 550 µA

IAVR = −250 to −15 µA;

CAVR < 100 pF

−10 −

1.15 1.20

−280 −

Control loop modulation output: pin MODOUT

Isource(MODOUT) source current

Isink(MODOUT) sink current

VMODOUT = 0.5 to 1.5 V;

CMODOUT < 100 pF

VMODOUT = 0.5 to 1.5 V;

CMODOUT < 100 pF

−

−

200 −

Control loop bias output: pin BIASOUT

Isource(BIASOUT) source current

Isink(BIASOUT) sink current

VBIASOUT = 0.5 to 1.5 V;

CBIASOUT < 100 pF

VBIASOUT = 0.5 to 1.5 V;

CBIASOUT < 100 pF

−

−

200 −

Bias current source: pins BIASIN and BIAS

gm(bias)

bias transconductance

Isource(BIASIN) source current at

pin BIASIN

VBIASIN = 0.5 to 1.5 V

VBIAS = VCCO = 3.3 V

VBIAS = 4.1 V; VCCO = 5.0 V

VBIASIN = 0.5 to 1.5 V

90

95

−110

110

110

−100

IBIAS(max)

IBIAS(min)

IBIAS(dis)

maximum bias current

minimum bias current

bias current at disable

VBIASIN = 1.8 V

VBIASIN = 0 to 0.4 V

VENABLE < 0.8 V

100 −

−

0.2

−

−

MAX. UNIT

−

−

−

dB

+10 %

1.25 V

−5

µA

150 µA

150 µA

−

µA

−

µA

+10 %

1.25 V

−15 µA

−200 µA

−

µA

−200 µA

−

µA

125 mA/V

130 mA/V

−95 µA

−

mA

0.4 mA

30

µA

2003 Jun 05

11

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