Philips Semiconductors
30 Mbits/s up to 1.25 Gbits/s laser drivers
Product specification
TZA3047A; TZA3047B
SYMBOL
PARAMETER
CONDITIONS
VBIAS
output voltage on pin BIAS normal operation
VCCO = 3.3 V
VCCO = 5 V
Modulation current source: pin MODIN
gm(mod)
modulation
transconductance
Isource(MODIN) source current at
pin MODIN
VMODIN = 0.5 to 1.5 V
VLA = VLAQ = VCCO = 3.3 V
VLA = VLAQ = VCCO = 4.5 V
VMODIN = 0.5 to 1.5 V
Modulation current outputs: pins LA
Io(LA)(max)(on)
maximum laser
VMODIN = 1.8 V;
modulation output current VLA = VCCO = 3.3 V; note 4
at LA on
Io(LA)(min)(on)
Io(LA)(min)(off)
Zo(LA), Zo(LAQ)
minimum laser modulation
output current at LA on
minimum laser modulation
output current at LA off
output impedance pins LA
and LAQ
VMODIN = 0 to 0.4 V;
VLA = VCCO = 3.3 V; note 4
VLA = VCCO = 3.3 V; note 4
VMODIN = 0.5 V
VMODIN = 1.5 V
Io(LA)(dis),
Io(LAQ)(dis)
non-inverted and inverted VENABLE < 0.8 V
laser modulation output
current at disable
Vo(LA)min
minimum output voltage at
pin LA
Enable function: pin ENABLE
TZA3047A; VCCO = 3.3 V
TZA3047B; VCCO = 3.3 V
TZA3047B; VCCO = 5 V
VIL
LOW-level input voltage bias and modulation currents
disabled
VIH
HIGH-level input voltage bias and modulation currents
enabled
Rpu(int)
internal pull-up resistance
Alarm reset: pin ALRESET
VIL
VIH
Rpd(int)
LOW-level input voltage
HIGH-level input voltage
internal pull-down
resistance
no reset
reset
MIN.
TYP.
0.4
−
0.8
−
78
80
−110
90
95
−100
100 −
−
5
−
−
−
−
80
100
−
−
1.6
−
1.2
−
1.6
−
−
−
2.0
−
16
20
−
−
2.0
−
7
10
MAX. UNIT
3.6 V
4.1 V
105 mA/V
110 mA/V
−95 µA
−
mA
6
mA
0.8 mA
2
mA
125 Ω
200 µA
−
V
−
V
−
V
0.8 V
−
V
30
kΩ
0.8 V
−
V
15
kΩ
2003 Jun 05
12