IR2125(Old_V) Ver la hoja de datos (PDF) - International Rectifier
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IR2125 Datasheet PDF : 16 Pages
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IR2125
HVDCMOS 4.0 µm
410
104 X 111 X 26 (mil)
Thickness of Gate Oxide
Connections
Material
First
Width
Layer
Spacing
Thickness
Material
Second
Width
Layer
Spacing
Thickness
Contact Hole Dimension
Insulation Layer
Material
Thickness
Passivation
Material
(1)
Thickness
Passivation
Material
(2)
Thickness
Method of Saw
Method of Die Bond
Wire Bond
Method
Material
Leadframe
Material
Die Area
Lead Plating
Package
Types
Materials
Remarks: * Patent Pending
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Proprietary*
Proprietary*
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
8 Lead PDIP
EME6300 / MP150 / MP190
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-111
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