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VNB10N07

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics 

VNB10N07/K10N07FM

®

VNP10N07FI/VNV10N07

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

T YPE

VNB10N07

VNK10N07FM

VNP10N07FI

VNV10N07

Vc lamp

70 V

70 V

70 V

70 V

R DS ( o n )

0.1 Ω

0.1 Ω

0.1 Ω

0.1 Ω

Ilim

10 A

10 A

10 A

10 A

s LINEAR CURRENT LIMITATION

s THERMAL SHUT DOWN

s SHORT CIRCUIT PROTECTION

s INTEGRATED CLAMP

s LOW CURRENT DRAWN FROM INPUT PIN

s DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

s ESD PROTECTION

s DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

s COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNB10N07, VNK10N07FM, VNP10N07FI

and VNV10N07 are monolithic devices made

using STMicroelectronics VIPower M0

Technology, intended for replacement of

standard power MOSFETS in DC to 50 KHz

applications. Built-in thermal shut-down, linear

current limitation and overvoltage clamp protect

BLOCK DIAGRAM (∗)

3

1

D2PAK

TO-263

SOT82-FM

3

2

1

ISOWATT220

10

1

PowerSO-10

the chip in harsh enviroments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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