VNB10N07 Ver la hoja de datos (PDF) - STMicroelectronics
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VNB10N07 Datasheet PDF : 14 Pages
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VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
gfs (∗)
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
Test Conditions
VDS = 13 V ID = 5 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
6
Typ .
8
M a x.
Unit
S
350 500 pF
SWITCHING (**)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 5 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 5 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 5 A
Rgen = 10 Ω
ID = 5 A Vin = 10 V
Min.
Typ .
50
80
230
100
600
0.9
3.8
1.7
60
M a x.
100
160
400
180
900
2
6
2.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
30
nC
SOURCE DRAIN DIODE
Symb ol
P a ram et er
VSD (∗) Forward O n Volt age
tr r (∗∗)
Qr r (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 5 A Vin = 0
ISD = 5 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
125
M a x.
1.6
Unit
V
ns
0.3
µC
4.8
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim
Drain Current Limit
tdlim (∗∗) St ep Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Eas (∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
7
7
150
135
0.4
Typ .
10
10
20
50
50
20
M a x.
14
14
30
80
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/14
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