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VNS1NV04

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VND1NV04

VNN1NV04 - VNS1NV04

OMNIFET II

fully autoprotected Power MOSFET

Features

Parameter

Symbol Value

Max on-state resistance (per ch.)

Current limitation (typ)

Drain-source clamp voltage

RON

ILIMH

VCLAMP

250 mΩ

1.7 A

40 V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power

MOSFET (analog driving)

■ Compatible with standard Power MOSFET

3

1

TO-252 (DPAK)

2

3

2

1

SOT-223

SO-8

Description

The VND1NV04, VNN1NV04, VNS1NV04 are

monolithic devices designed in

STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 KHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

Table 1. Device summary

Package

TO-252 (DPAK)

SOT-223

SO-8

Tube

VND1NV04

VNN1NV04

VNS1NV04

Order codes

Tube (lead free) Tape and reel Tape and reel (lead free)

VND1NV04-E

-

-

VND1NV04TR

VNN1NV04TR

VNS1NV04TR

VND1NV04TR-E

-

-

April 2009

Doc ID 7381 Rev 2

1/33

www.st.com

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