VNS1NV04 Ver la hoja de datos (PDF) - STMicroelectronics
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VNS1NV04 Datasheet PDF : 33 Pages
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Electrical specifications
VND1NV04 - VNN1NV04 - VNS1NV04
Table 4.
Symbol
Electrical characteristics (continued)
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=RIN MIN=330 Ω
(see Figure 4)
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=2.2 KΩ
(see Figure 4)
(dI/dt)on
Turn-on current slope
VDD=15 V; ID=1.5 A
Vgen=5 V; Rgen=RIN MIN=330 Ω
Qi Total input charge
VDD=12 V; ID=0.5 A; VIN=5 V
Igen=2.13 mA (see Figure 7)
Source drain diode (Tj=25 °C, unless otherwise specified)
VSD(1) Forward on voltage ISD=0.5 A; VIN=0 V
trr
Qrr
IRRM
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
ISD=0.5 A; dI/dt=6 A/µs
VDD=30 V; L=200 µH
(see Figure 5)
Protections (-40 °C<Tj<150 °C, unless otherwise specified)
Ilim Drain current limit
tdlim
Step response
current limit
VIN=5 V; VDS=13 V
VIN=5 V; VDS=13 V
Tjsh
Over temperature
shutdown
Tjrs
Over temperature
reset
Igf Fault sink current
Eas
Single pulse
avalanche energy
VIN=5 V; VDS=13 V; Tj=Tjsh
Starting Tj=25 °C; VDD=24 V
VIN=5 V Rgen=RIN MIN=330 Ω;
L=50 mH
(see Figure 6 and Figure 8)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min Typ Max Unit
70 200 ns
170 500 ns
350 1000 ns
200 600 ns
0.25 1.0 µs
1.3 4.0 µs
1.8 5.5 µs
1.2 4.0 µs
5
A/µs
5
nC
0.8
V
205
ns
100
nC
0.7
A
1.7
3.5 A
2.0
µs
150 175 200 °C
135
°C
10 15 20 mA
55
mJ
8/33
Doc ID 7381 Rev 2
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