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FCH104N60F Ver la hoja de datos (PDF) - Fairchild Semiconductor

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Lista de partido
FCH104N60F
Fairchild
Fairchild Semiconductor Fairchild
FCH104N60F Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Part Number
FCH104N60F
Top Mark
FCH104N60F
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10 mA, VGS = 0 V, TC = 25oC
600
ID = 10 mA, VGS = 0 V, TC = 150oC 650
ID = 10 mA, Referenced to 25oC
-
VDS = 480 V, VGS = 0 V
-
VDS = 480 V, VGS = 0 V, TC = 125oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 18.5 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 18.5 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
-
VDS = 380 V, VGS = 0V, f = 1 MHz
-
VDS = 0 V to 480 V, VGS = 0 V
-
VDS = 380 V, ID = 18.5 A,
-
VGS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Typ.
-
-
0.67
-
-
-
-
98
47
4475
135
1.5
75
109
107
25
44
0.87
Max. Unit
-
-
-
10
100
±100
V
V/oC
μA
nA
5
V
104 mΩ
-
S
5950 pF
180
pF
2.5
pF
-
pF
-
pF
139
nC
-
nC
-
nC
-
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 380 V, ID = 18.5 A,
-
VGS = 10 V, RG = 4.7 Ω
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18.5 A
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 18.5 A,
-
dIF/dt = 100 A/μs
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 6.8 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 18.5 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
34
78
ns
24
58
ns
98
206
ns
5
20
ns
-
37
A
-
111
A
-
1.2
V
144
-
ns
0.89
-
μC
©2013 Fairchild Semiconductor Corporation
2
FCH104N60F Rev. C1
www.fairchildsemi.com

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