FCH104N60F Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCH104N60F Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS = 10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
10
VDVSD,S,DDrarainint-oSoSuorucreceVoVlotaltgaeg[eV][V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
30
60
90
120
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
100
*Note:
10
1. VGS = 0V
2. f = 1MHz
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1 Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
600
VVDDSS,, DDrraaiinn-tSooSuorcuercVeoVltoalgtaeg[eV[]V]
Figure 2. Transfer Characteristics
200
100
150oC
25oC
10
-55oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
4
5
6
7
8
9
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 18.5A
0
0
30
60
90
120
Qg, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
3
FCH104N60F Rev. C1
www.fairchildsemi.com
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