IRG4BC20UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.69
1.85 2.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
2.27
V
IC = 13A
See Fig.2, 5
1.87
IC = 6.5A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
1.4 4.3 S VCE = 100V, IC = 6.5A
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
27 41
IC = 6.5A
4.5 6.8
10 16
nC VCC = 400V
VGE = 15V
See Fig. 8
21
13 ns TJ = 25°C
86 130
IC = 6.5A, VCC = 480V
120 180
VGE = 15V, RG = 50Ω
0.10
Energy losses include "tail"
0.12 mJ See Fig. 10, 11, 13, 14
0.22 0.4
20
TJ = 150°C,
14
190
ns IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
140
Energy losses include "tail"
0.42 mJ See Fig. 13, 14
7.5 nH Measured 5mm from package
530
VGE = 0V
39 pF VCC = 30V
See Fig. 7
7.4
= 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
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