IRG4BC20UPBF(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC20UPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4BC20UPbF

14

VGE = 15V

12

10

8

6

4

2

0

25

50

75

100

125

150

TC , Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

2.6

VGE = 15V

80µs PULSE WIDTH

2.2

IC = 13A

1.8

IC = 6.5A

1.4

I C = 3.3A

1.0

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

10

1 D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

Notes:

1. Duty factor D = t1 / t 2

t1

t2

0.01

0.00001

0.0001

0.001

0.01

2. Peak TJ = PDM x Z thJC + TC

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

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