AN8000 Ver la hoja de datos (PDF) - Panasonic Corporation
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Lista de partido
AN8000 Datasheet PDF : 7 Pages
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s Electrical Characteristics (Ta=25˚C)
· AN8007/AN8007M (7V Type)
Parameter
Symbol
Condition
min typ max Unit
Output voltage
Line regulation
Load regulation
VO
REGIN
REGL
Tj=25˚C
VI=7.5 to 13V, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
IO=1 to 50mA, Tj=25˚C
6.72
7 7.28
V
6.5
70 mV
14
50 mV
31
60 mV
Minimum I/O voltage difference
VDIF (min.)
VI=6.8V, IO=20mA, Tj=25˚C
VI=6.8V, IO=50mA, Tj=25˚C
0.07 0.2
V
0.13 0.3
V
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Ibias
RR
Vno
∆VO/Ta
IO=0mA, Tj=25˚C
VI=8 to 10V, f=120Hz
f=10Hz to 100kHz
Tj=–30 to+125˚C
0.7
50
62
120
0.35
1.3 mA
dB
µV
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=8V, IO=20mA, CO=10µF
· AN8008/AN8008M (8V Type)
Parameter
Symbol
Condition
min typ max Unit
Output voltage
Line regulation
Load regulation
VO
REGIN
REGL
Tj=25˚C
VI=8.5 to 14V, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
IO=1 to 50mA, Tj=25˚C
7.68
8 8.32
V
7.5
80 mV
15
55 mV
34
65 mV
Minimum I/O voltage difference
VDIF (min.)
VI=7.8V, IO=20mA, Tj=25˚C
VI=7.8V, IO=50mA, Tj=25˚C
0.07 0.2
V
0.14 0.3
V
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Ibias
RR
Vno
∆VO/Ta
IO=0mA, Tj=25˚C
VI=9 to 11V, f=120Hz
f=10Hz to 100kHz
Tj=–30 to+125˚C
0.7 1.3 mA
49
61
dB
135
µV
0.4
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=9V, IO=20mA, CO=10µF
· AN8085/AN8085M (8.5V Type)
Parameter
Symbol
Condition
min typ max Unit
Output voltage
Line regulation
Load regulation
VO
REGIN
REGL
Tj=25˚C
VI=9 to 14.5V, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
IO=1 to 50mA, Tj=25˚C
8.16 8.50 8.84
V
8.3
90 mV
16
60 mV
36
70 mV
Minimum I/O voltage difference
VDIF (min.)
VI=8.3V, IO=20mA, Tj=25˚C
VI=8.3V, IO=50mA, Tj=25˚C
0.07
0.2
V
0.14
0.3
V
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Ibias
RR
Vno
∆VO/Ta
IO=0mA, Tj=25˚C
VI=9.5 to 11.5V, f=120Hz
f=10Hz to 100kHz
Tj=–30 to+125˚C
0.8
48
60
140
0.43
1.4 mA
dB
µV
mV/˚C
Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, VI=9.5V, IO=20mA, CO=10µF
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