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IRFD9210

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRFD9210, SiHFD9210

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

- 200

VGS = - 10 V

3.0

8.9

2.1

3.9

Single

S

HVMDIP

G

S

G

D

D

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• P-Channel

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

The Power MOSFETs technology is the key to Vishay

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design archieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

HVMDIP

IRFD9210PbF

SiHFD9210-E3

IRFD9210

SiHFD9210

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at - 10 V

TA = 25 °C

TA = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TA = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = - 50 V, starting TJ = 25 °C, L = 123 mH, Rg = 25 , IAS = - 1.6 A (see fig. 12).

c. ISD  - 2.3 A, dI/dt  70 A/µs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

LIMIT

- 200

± 20

- 0.40

- 0.25

- 3.2

0.0083

210

- 0.40

0.10

1.0

- 5.0

- 55 to + 150

300d

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91140

S10-2464-Rev. C, 25-Oct-10

www.vishay.com

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