IRFD9210 Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFD9210 Datasheet PDF : 9 Pages
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IRFD9210, SiHFD9210
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 0.24 Ab
VDS = - 50 V, ID = - 0.24 A
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = - 1.3 A, VDS = - 160 V
Qgs
VGS = - 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = - 100 V, ID = - 2.3 A
Rg = 24 , RD = 41
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 0.40 A, VGS = 0 Vb
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µsb
Qrr
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
MIN.
- 200
-
- 2.0
-
-
-
-
0.27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
S
170
-
54
-
pF
16
-
-
8.9
-
2.1
nC
-
3.9
8.0
-
12
-
ns
11
-
13
-
4.0
-
nH
6.0
-
-
- 0.40
A
-
- 3.2
-
- 5.8
V
110
220
ns
0.56 1.1
µC
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2
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
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