IRFL210TR Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFL210TR Datasheet PDF : 8 Pages
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Power MOSFET
IRFL210, SiHFL210
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
1.5
8.2
1.8
4.5
Single
D
SOT-223
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRFL210PbF
SiHFL210-E3
IRFL210
SiHFL210
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
SOT-223
IRFL210TRPbFa
SiHFL210T-E3a
IRFL210TRa
SiHFL210Ta
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
200
± 20
0.96
0.6
7.7
0.025
0.017
50
0.96
0.31
UNIT
V
A
W/°C
mJ
A
mJ
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
www.vishay.com
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