IRFL210TR Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFL210TR Datasheet PDF : 8 Pages
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IRFL210, SiHFL210
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
0.96
A
-
-
7.7
Body Diode Voltage
VSD
TJ = 25 °C, IS = 0.96 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
150
310
ns
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µsb
Qrr
-
0.60 1.4
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
101
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
100 150 °C
25 °C
10-1
10-1
4.5 V
20 µs Pulse Width
TC = 25 °C
10-1
100
101
91193_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
10-2
4
91193_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VGS
Top 15 V
10 V
8.0 V
7.0 V
100
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10-1
20 µs Pulse Width
TC = 150 °C
10-1
100
101
91193_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.5
ID = 3.3 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91193_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
www.vishay.com
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