IRG4BC10SDPBF Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10SDPbF

Notes:

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)

‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)

ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.

„Pulse width 5.0µs, single shot.

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.07/2007

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