IRG4BC10SDPBF Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10SDPbF

15 RG = 11000 Ω

TJ = 150° C

VCC = 480V

12 VGE = 15V

9

6

3

0

0

4

8

12

16

20

I C, Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector Current

100

100 VGE = 20V

TJ = 125 oC

10

SAFE OPERATING AREA

1

1

10

100

1000

VCE , Collector-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

10

TJ = 150°C

TJ = 125°C

TJ = 25°C

1

0.1

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Forward Volttaaggee DDrroopp -- VVFMFM(VV) )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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